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FNK6520 Datasheet N-Channel Power MOSFET

Manufacturer: FNK

Datasheet Details

Part number FNK6520
Manufacturer FNK
File Size 864.78 KB
Description N-Channel Power MOSFET
Download FNK6520 Download (PDF)

General Description

The FNK6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 50A < 8.5mΩ < 11mΩ 100% UIS Tested 100% Rg Tested FNK6520 Top View DFN5X6 Bottom View Top View D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 50 29 140 11 9 35 31 31 12.5 1.9 1.2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Juncti

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