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FNK6520 - N-Channel Power MOSFET

Description

The FNK6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

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Datasheet Details

Part number FNK6520
Manufacturer FNK
File Size 864.78 KB
Description N-Channel Power MOSFET
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General Description The FNK6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 50A < 8.5mΩ < 11mΩ 100% UIS Tested 100% Rg Tested FNK6520 Top View DFN5X6 Bottom View Top View D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
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