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FNK6578D - N-Channel Power MOSFET

Description

The FNK6578D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 65V,ID =78A RDS(ON) < 8.2mΩ @ VGS=10V (Typ:6.7mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number FNK6578D
Manufacturer FNK
File Size 1.27 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK6578D Datasheet

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Full PDF Text Transcription

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FNK6578D FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6578D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 65V,ID =78A RDS(ON) < 8.2mΩ @ VGS=10V (Typ:6.
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