FNK FNK65N07D
The FNK65N07D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK65N07D |
|---|---|
| Datasheet | FNK65N07D Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. FNK65N07DGENERAL FEATURES
● VDS =65V,ID =85A RDS(ON) < 7.7mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK65N07D FNK65N07D TO-263 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Contin
