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FNK6A-1 - N-Channel Power MOSFET

Description

The FNK6A-1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 19V,ID =6A RDS(ON).

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Datasheet Details

Part number FNK6A-1
Manufacturer FNK
File Size 1.48 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK6A-1 Datasheet
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FNK6A-1 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6A-1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19V,ID =6A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 19m Ω @ VGS=4.
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