Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK80N08K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 80V,ID =70A RDS(ON) < 11.5m Ω @ VGS=10V
(Typ:9.5mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
TO-252 top view
Package Marking and Ordering Information
Device...