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FNK9926 - N-Channel Power MOSFET

Description

TheFNK9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =6A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 26mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current Schematic diagram.

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Datasheet Details

Part number FNK9926
Manufacturer FNK
File Size 783.97 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK9926 Datasheet
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FNK9926 FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =6A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 26mΩ @ VGS=2.
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