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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD
FS3404
SOT-23-3L (SOT-23-3L Field Effect Transistors)
N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS
Characteristic
Drain-Source Voltage -
Gate- Source Voltage -
Drain Current (continuous) -
Drain Current (pulsed) -
Total Device Dissipation
TA=25℃ 25℃
Junction
Symbol BVDSS VGS
ID IDM PD
TJ
Storage Temperature
Tstg
■DEVICE MARKING
FS3404=A4LA
Max
30 +20 5.8
20 1500
150
-55to+150
Unit
V V A
A mW
℃
℃
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.