FOSAN FS3404
SOT-23-3L Field Effect Transistor
| Part No. | FS3404 |
|---|---|
| Datasheet | FS3404 Download |
| Manufacturer | FOSAN |
| Description | SOT-23-3L Field Effect Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
最大額定值 Characteristic 特性參數 Drain-Source Voltage 漏極-源極電壓 Gate- Source Voltage 栅極-源極電壓 Drain Current (continuous) 漏極電流-連續 Drain Current (pulsed) 漏極電流-脉冲 Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ Junction 結溫 Symbol 符號 BVDSS VGS ID IDM PD TJ Storage Temperature Tstg 儲存溫度●DEVICE MARKING 打標 FS3404=A4LA Max 最大值 30 +20 5.8 20 1500 150 -55to+150 Unit 單位 V V A A mW ℃ ℃ 安徽富信半導體科技有限公司 ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD FS3404
●
ELECTRICAL CHARACTERISTICS
電特性 (TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃) Characteristic 特性參數 Symbol Min 符號 最小值 Typ 典型值 Max 最大值 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID =250uA,VGS=0V) BVDSS 30 32 — Gate Threshold Voltage 栅極開启電壓(ID = 250uA,VGS= VDS) VGS(th) 1 — 3 Diode Forward Voltage Drop 内附二極管正向壓降(IS= 1A,VGS=0V) VSD — 0.7 1 Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 30V) IDSS — — 1 Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) IGSS — — +100 Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 5A,VGS=10V) RDS(ON) — 24 28 Static Dr...
