3DD2603 - SILICON NPN TRANSISTOR

Features

High VCEO,low V . CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 100 V VEBO 5.0 V IC 5.0 A PC 2.0 W PC(TC=25℃) 40 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) fT VCB=100V VEB=5.0V VCE=5.0V IC=3.0A VCE=5.0V IE=0 IC=0 IC=1.0A.
IB=0.3A.
IC=500mA f=1.0MHz Min 60 10 Rating Typ Max 20 20 200 1.0 Unit μA μA V MHz.
:/pulse test. hFE /hFE classifications: R:60～120 O.

FOSHAN BLUE ROCKET

Datasheet Details

Part number	3DD2603
Manufacturer	FOSHAN BLUE ROCKET
File Size	161.33 KB
Description	SILICON NPN TRANSISTOR
Datasheet	3DD2603 Datasheet
Additional preview pages of the 3DD2603 datasheet.

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2SD2603(3DD2603) NPN /SILICON NPN TRANSISTOR ：。 Purpose: Power out amplifier applications. ：,。 Features: High VCEO,low V .CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 100 V VEBO 5.0 V IC 5.0 A PC 2.0 W PC(TC=25℃) 40 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) fT VCB=100V VEB=5.0V VCE=5.0V IC=3.0A VCE=5.0V IE=0 IC=0 IC=1.0A* IB=0.3A* IC=500mA f=1.0MHz Min 60 10 Rating Typ Max 20 20 200 1.0 Unit μA μA V MHz *:/pulse test. hFE /hFE classifications: R:60～120 O:100～200 FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. 2SD2603(3DD2603) FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.

Published: Mar 24, 2015 |