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3DG8050M - SILICON NPN TRANSISTOR

Key Features

  • Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 40 V VCEO 25 V VEBO 6.0 V IC 800 mA IB 200 mA PC 450 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Min VCBO VCEO VEBO ICBO IEBO hFE（1） hFE（2） hFE（3） VCE(sat) VBE(sat) VBE fT Cob IC=0.1mA IC=2.0mA IE=0.1mA VCB=35V VEB=6.0V VCE=1.0V VCE=1.0V VCE=1.0V IC=500mA IC=500mA VCE=1.0V VCE=10V VCB=10V IE=0 IB=0 IC=0 IE=0 IC=0 IC=100mA IC=.

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Datasheet Details

Part number 3DG8050M
Manufacturer FOSHAN BLUE ROCKET
File Size 197.50 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG8050M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR :。/Purpose: Power amplifier applications. : S8550M(3CG8550M)。/Features: Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 40 V VCEO 25 V VEBO 6.0 V IC 800 mA IB 200 mA PC 450 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Min VCBO VCEO VEBO ICBO IEBO hFE（1） hFE（2） hFE（3） VCE(sat) VBE(sat) VBE fT Cob IC=0.1mA IC=2.0mA IE=0.1mA VCB=35V VEB=6.0V VCE=1.0V VCE=1.0V VCE=1.0V IC=500mA IC=500mA VCE=1.0V VCE=10V VCB=10V IE=0 IB=0 IC=0 IE=0 IC=0 IC=100mA IC=500mA IC=5.0mA IB=50mA IB=50mA IC=10mA IC=50mA IE=0 f=1.0MHz 40 25 6.