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D2603 - SILICON NPN TRANSISTOR

Key Features

  • High VCEO,low V . CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 100 V VEBO 5.0 V IC 5.0 A PC 2.0 W PC(TC=25℃) 40 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) fT VCB=100V VEB=5.0V VCE=5.0V IC=3.0A VCE=5.0V IE=0 IC=0 IC=1.0A.
  • IB=0.3A.
  • IC=500mA f=1.0MHz Min 60 10 Rating Typ Max 20 20 200 1.0 Unit μA μA V MHz.
  • :/pulse test. hFE /hFE classifications: R:60～120 O.

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Datasheet Details

Part number D2603
Manufacturer FOSHAN BLUE ROCKET
File Size 161.33 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet D2603 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2603(3DD2603) NPN /SILICON NPN TRANSISTOR ：。 Purpose: Power out amplifier applications. ：,。 Features: High VCEO,low V .CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 100 V VCEO 100 V VEBO 5.0 V IC 5.0 A PC 2.0 W PC(TC=25℃) 40 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) fT VCB=100V VEB=5.0V VCE=5.0V IC=3.0A VCE=5.0V IE=0 IC=0 IC=1.0A* IB=0.3A* IC=500mA f=1.0MHz Min 60 10 Rating Typ Max 20 20 200 1.0 Unit μA μA V MHz *:/pulse test. hFE /hFE classifications: R:60～120 O:100～200 FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. 2SD2603(3DD2603) FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.