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TC2309 - 30V high-density P-channel MOS transistor

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Datasheet Details

Part number TC2309
Manufacturer FUMAN ELECTRONICS
File Size 97.22 KB
Description 30V high-density P-channel MOS transistor
Datasheet download datasheet TC2309 Datasheet

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D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC2309(:S&CIC1053) 30V P MOS 、  30V P MOS   RDS(ON)<53mΩ@VGS= -10V  RDS(OFF)<65mΩ@VGS= -4.5V S1 S2 S3 G4 8D 7D 6D 5D 、  C、 SOP-8 、  (TA=25℃,) VDSS VGSS ID IDM IS TJ TSTG  B(TA=25℃,) BVDSS VGS=0V, IDS=250uA IDSS VGS(th) IGSS VDS=-24V, VGS=0V TA=25℃ VDS=VGS, IDS=250uA VGS=±12V, VDS=0V RDS(ON) VGS=-10V, IDS=-0.5A VGS=-4.5V, IDS=-0.5A VGS=-2.5V, IDS=-0.5A VSD ISD=-1A, VGS=0V -30 ±12 -4 -15 -1 150 -55~150 V V A A A ℃ ℃ -30 -0.6 -30 -0.8 43 50 60 -0.7 -1 30 -1.1 ±100 53 65 100 -1.