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3418 - POWER MOSFET

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Part number 3418
Manufacturer FUMAN
File Size 109.30 KB
Description POWER MOSFET
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Description

Wafer Diameter: 8 inchs. Wafer Thickness: 8 mils. Die Size: 960 µm ×810µm. Scribe Line Width: 60µm Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag. Metal Thickness: Frontside: 4µm, Backside: 1.4µm. Bonding Area: Gate: 120µm ×120µm.Source: Full metalized surface of source region Recommended Wire Bounding Gate: 1.5mil ×1 Au Source: 1.5mil ×4 Au or 2 mil ×3 Au Electrical Characteristics (Wafer Type

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