FUMAN 3418
POWER MOSFET
| Part No. | 3418 |
|---|---|
| Datasheet | 3418 Download |
| Manufacturer |  FUMAN |
| Description | POWER MOSFET |
| Buy | Stock & Price |
APPLICATIONS
● Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. DieDESCRIPTION
● Wafer Diameter: 8 inchs. (±0.1 inchs)● Wafer Thickness: 8 mils. (±0.6mils)
● Die Size: 960 µm ×810µm. (Including scribe line)
● Scribe Line Width: 60µm
● Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.
● Metal Thickness: Frontside: 4µm, Backside: 1.4µm.
● Bonding Area: Gate: 120µm ×120µm. Source: Full metalized surface of source region
● Recommended Wire Bounding Gate: 1.5mil ×1 Au Source: 1.5mil ×4 Au or 2 mil ×3 Au
ELECTRICAL CHARACTERISTICS
(Wafer Type) 1.ABSOLUTE MAXIMUM RATINGS
(TA=25℃ Unless Otherwise Noted) Symbol. VDSS VGSS ID IDM IS TJ TSTG RθJAb Parameter Drain-Source Voltage Gate-Source Voltage Continue Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Rating -30 ±12 -4 -15 -1 150 -55 to 150 150 Unit V A A ℃ ℃/W 第1页共2页 深圳市富满电子有限公司 SHENZHEN FUMAN ELECTRONICS CO., LTD.