3418 - POWER MOSFET

Datasheet Summary

Description

Wafer Diameter: 8 inchs.

Wafer Thickness: 8 mils.

Die Size: 960 µm ×810µm.

Scribe Line Width: 60µm

Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.

Frontside: 4µm, Backside: 1.4µm.

Bonding

FUMAN

📥 Download Datasheet

Datasheet Details

Part number	3418
Manufacturer	FUMAN
File Size	109.30 KB
Description	POWER MOSFET
Datasheet	3418 Datasheet
Additional preview pages of the 3418 datasheet.

📁 Similar Datasheet

3410 - Linear Low Density Polyethylene (TAISOX)
3410A - (3410xA) Three Phase Bridge (VMI)
3410B - (3410xB) Three Phase Bridge (VMI)
3410FA - (3410xA) Three Phase Bridge (VMI)
3410FB - (3410xB) Three Phase Bridge (VMI)
3410UFA - (3410xA) Three Phase Bridge (VMI)
3410UFB - (3410xB) Three Phase Bridge (VMI)
3412S - Super Bright LED Lamp (STANLEY)
3414 - Linear Low Density Polyethylene (TAISOX)
3414 - SINGLE-SUPPLY DUAL HIGH CURRENT OPERATIONAL AMPLIFIER (UTC)

Other Datasheets by FUMAN

Full PDF Text Transcription

Click to expand full text

SHENZHEN FUMAN ELECTRONICS CO., LTD. 3418 (：S&CIC0937) POWER MOSFET WAFER DATASHEET Feature  30V P-channel MOSFET High Dense Design.  Ultra low On-Resistance.  RDS(ON) <53mΩ @ VGS=-10V  RDS(ON) <65mΩ @ VGS=-4.5V  Reliable and Rugged  Gross die: 38K D 3 xxxxxx 1 2 G S SOT-23 Applications  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Die Description  Wafer Diameter: 8 inchs. (±0.1 inchs)  Wafer Thickness: 8 mils. (±0.6mils)  Die Size: 960 µm ×810µm. (Including scribe line)  Scribe Line Width: 60µm  Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.  Metal Thickness: Frontside: 4µm, Backside: 1.4µm.  Bonding Area: Gate: 120µm ×120µm. Source: Full metalized surface of source region  Recommended Wire Bounding Gate: 1.

Published: Apr 8, 2019 |