3418
3418 is POWER MOSFET manufactured by FUMAN.
Feature
- 30V P-channel MOSFET High Dense Design.
- Ultra low On-Resistance.
- RDS(ON) <53mΩ @ VGS=-10V
- RDS(ON) <65mΩ @ VGS=-4.5V
- Reliable and Rugged
- Gross die: 38K
D 3 xxxxxx
SOT-23
Applications
- Power Management in Notebook puter, Portable Equipment and Battery Powered Systems.
Die Description
- Wafer Diameter: 8 inchs. (±0.1 inchs)
- Wafer Thickness: 8 mils. (±0.6mils)
- Die Size: 960 µm ×810µm. (Including scribe line)
- Scribe Line Width: 60µm
- Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.
- Metal Thickness:
Frontside: 4µm, Backside: 1.4µm.
- Bonding Area:
Gate: 120µm ×120µm. Source: Full metalized surface of source region
- Remended Wire Bounding
Gate: 1.5mil ×1 Au Source: 1.5mil ×4 Au or 2 mil ×3 Au
Electrical Characteristics (Wafer Type)
1. Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Symbol.
VDSS VGSS
ID IDM IS TJ TSTG RθJAb
Parameter
Drain-Source Voltage Gate-Source Voltage Continue Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
Rating
-30 ±12 -4 -15 -1 150 -55 to 150 150
Unit
℃...
