FD0200YR Datasheet PDF

FEATURES

:
● Low breakover current.
● Excellent symmetry.
● Very low leakage current. P1

ABSOLUTE MAXIMUM RATINGS

, according to IEC publication No. 134 Ptot ITRM Tstg Tj PARAMETER Total Power Dissipation Repetitive peak on-state current Storage Temperature Range Operating Junction Temperature CONDITIONS Ta = 65 ºC tp = 20 µs, f = 100 Hz Min. Typ. Max. 150 2 +125 +125 Unit mW A ºC ºC -40 -40 Thermal Resistance R th (j-a) R th (j-l) PARAMETER Junction to Ambient Junction to leads CONDITIONS Min. Typ. 400 150 Max. Unit ºC/W ºC/W

ELECTRICAL CHARACTERISTICS

at Tamb = 25 ºC VBO VBO+ - -VBO∆V± VO IBO tr IB IP PARAMETER Breakover Voltage * Breakover Voltage Symmetry Dynamic breakover voltage * Output Voltage * Breakover Current * Rise Time * Leakage Current * Peak Current * CONDITIONS IBO, C = 22nF ** (see Figure 1) IBO, C = 22nF ** (see Figure 1) ∆I = [IBO to IF = 10 mA] (see Figure 1) (see Figure 3) C = 22 nF ** (see Figure 4) VB = 0.5 VBO max (see Figure 1) see Figure 3 (Gate) Min. 28 5 5 50 1.5 10 0.3 Typ.