FS02 Datasheet | Fagor

.. FS02...N SURFACE MOUNT SCR SOT223 (Plastic) On-State Current 1.25 Amp Gate Trigger Current < 200 µA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current- Average On-state Current- Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20 ms max. Min. 1.25 0.8 25 22.5 2.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld -40 -40 10s max. - with 5 cm2 copper (e= 35µm) surface under tab. SYMBOL PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 KΩ B 200 VOLTAGE D 400 M 600 N 800 Unit V VDRM VRRM Jun - 02 FS02...N SURFACE MOUNT SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RL = 3.3KΩ, RGK = 1KΩ, MIN Tj = 125 ºC IT = 50 m A , RGK = 1KΩ, Tj = 25 ºC IG = 1 m A , RGK = 1KΩ, Tj = 25 ºC VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC MAX MAX MIN MIN 01 1...