FS0802xD Datasheet | Fagor

.. FS0802.D SURFACE MOUNT SCR DPAK (Plastic) On-State Current 8 Amp Off-State Voltage Gate Trigger Current < 200 µA 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180º Conduction Angle, Tc = 110 ºC Half Cycle, Θ = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. Min. Max. 8 5 73 70 24 8 4 5 1 +125 +150 260 Unit A A A A A 2s V A W W ºC ºC ºC IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 KΩ B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Feb - 03 .. FS0802.D SURFACE MOUNT SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS VD = 12 VDC , RL = 140Ω. Tj = 25 ºC MIN MAX MAX MAX MAX MAX MIN SENSITIVITY 02 Unit µA 200 1 5 1.6 0.8 0.1 5 6 5 50 20 70 Tj = 125 ºC Tj = 125 ºC MAX MAX 0.85 46 m A µA V V V m A m A V/µs IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a) Vt0 Rd V D = VDRM , RGK = 220Ω Tj = 125 ºC VR = VRRM , Tj = 25 ºC at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 140Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ, RGK = 220Ω Tj = 125 ºC IT = 50 m A, RGK = 1KΩ Tj = 25 ºC MAX IG = 1 m A, RGK = 1 KΩ MAX MIN VD = 0.67 x VDRM , RGK = 220Ω, Tj = 125 ºC...