11N120CN Datasheet (PDF) Download
Fairchild Semiconductor
11N120CN

Key Features

  • 43A, 1200V, TC = 25oC
  • 1200V Switching SOA Capability
  • Short Circuit Rating
  • Low Conduction Loss
  • Avalanche Rated
  • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49291.