Datasheet Summary
FQB13N10 / FQI13N10
January 2001
QFET
FQB13N10 / FQI13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D
Features
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- 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC)...
