13N10 - FQB13N10

Product Overview

Fairchild Semiconductor

Part number	13N10
Manufacturer	Fairchild Semiconductor
File Size	690.71 KB
Description	FQB13N10
Datasheet	13N10 Datasheet
Additional preview pages of the 13N10 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series www. DataSheet. net/ ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source.

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Published: Nov 18, 2012 |