13N50CF Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...
13N50CF Key Features
- 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
- Low Gate Charge (Typ. 43 nC)
- Low Crss (Typ. 20 pF)
- 100% Avalanche Tested
- Fast Recovery Body Diode (Typ. 100 ns)
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
- Derate above 25oC
- Drain current limited by maximum junction temperature