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13N50CF - N-Channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 13 A, 500 V, RDS(on) = 540 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A.
  • Low Gate Charge (Typ. 43 nC).
  • Low Crss (Typ. 20 pF).
  • 100% Avalanche Tested.
  • Fast Recovery Body Diode (Typ. 100 ns).

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
13N50C 500V N-Channel MOSFET
13N06L FQB13N06L
13N10 FQB13N10
13N80 FQA13N80

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQPF13N50CF — N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features • 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Fast Recovery Body Diode (Typ. 100 ns) Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.