13N50CF Datasheet | Fairchild Semiconductor

FQPF13N50CF - N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features - 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A - Low Gate Charge (Typ. 43 nC) - Low Crss (Typ. 20 pF) - 100% Avalanche Tested - Fast Recovery Body Diode (Typ. 100 ns) Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,...