Datasheet4U Logo Datasheet4U.com

15P12 - P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • -15 A, -120 V, RDS(on) = 0.2 Ω (Max. ) @ VGS=-10 V, ID = -7.5 A.
  • Low Gate Charge (Typ. 29 nC).
  • Low Crss (Typ. 110 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating S G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Si.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
15P12 P-CHANNEL MOSFET UTC

Other Datasheets by Fairchild (onsemi)

Part Number Description

Full PDF Text Transcription

Click to expand full text
FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET August 2014 FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET -120 V, -15 A, 0.2 Ω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ.
Published: |