19N20C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
- 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
- Low gate charge ( typical 40.5 n C)
- Low Crss ( typical 85 p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
G DS
TO-3PN
FQA Series
{
G{
- ◀▲
- -
{
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note...
