Fairchild Semiconductor 20S120M
The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.| Part No. | 20S120M |
|---|---|
| Datasheet | 20S120M Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | FGA20S120M |
| Buy | Stock & Price |
FEATURES
● High Speed Switching● Low Saturation Voltage: VCE(sat) = 1.55 V @ IC = 20 A
● High Input Impedance
● RoHS Compliant
APPLICATIONS
● Induction Heating, Microwave OvenGENERAL DESCRIPTION
Using advanced field stop trench and shorted-anode technology, Fairchild®’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. C GCE TO-3PNABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted SymbolDESCRIPTION
VCES VGES IC ICM (1) Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC IF Diode Continuous Forward Current @ TC = 25oC IF Diode Continuous Forward Current @ TC = 100oC PD Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJC(...
