28N15
Key Features
- This N-Channel enhancement mode power MOSFET is
- 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V
- Low Gate Charge (Typ. 0 nC)
- Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
