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2N3819
2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92
1
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol VDG VGS ID IGF TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range Ratings 25 -25 50 10 -55 ~ 150 Units V V mA mA °C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits.
2N3819 Datasheet
