2N3819 Description
2N3819 2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Source Epitaxial Silicon Transistor Ratings TC=25°C unless otherwise noted Symbol VDG VGS ID IGF TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range Ratings 25 -25 50 10 -55 ~ 150...