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2N3820
2N3820
P-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 89.
1
TO-92
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol VDG VGS IGF TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Storage Temperature Range Ratings -20 20 10 -55 ~ 150 Units V V mA °C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits.