2N5769 - NPN Switching Transistor

Fairchild Semiconductor

Datasheet Details

Part number	2N5769
Manufacturer	Fairchild Semiconductor
File Size	26.23 KB
Description	NPN Switching Transistor
Datasheet	2N5769 Datasheet
Additional preview pages of the 2N5769 datasheet.

📁 Similar Datasheet

2N5769 - SILICON NPN TRANSISTORS (Central Semiconductor)
2N5760 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
2N5760 - (2N5758 - 2N5760) Silicon NPN Power Transistors (SavantIC)
2N5716 - SILICON LOW NOISE N-CHANNEL JUNCTION FET (ETC)
2N5717 - SILICON LOW NOISE N-CHANNEL JUNCTION FET (ETC)
2N5718 - SILICON LOW NOISE N-CHANNEL JUNCTION FET (ETC)
2N5724 - SCR (Microsemi)
2N5725 - SCR (Microsemi)
2N5726 - SCR (Microsemi)
2N5727 - SCR (Microsemi)

Other Datasheets by Fairchild Semiconductor

2N5770 - NPN RF Transistor
2N5771 - PNP Switching Transistor
2N5772 - NPN Switching Transistor
2N5086 - PNP General Purpose Amplifier
2N5087 - PNP General Purpose Amplifier
2N5088 - NPN General Purpose Amplifier
2N5089 - NPN General Purpose Amplifier
2N5172 - NPN General Purpose Amplifier

Full PDF Text Transcription

Click to expand full text

2N5769 Discrete POWER & Signal Technologies 2N5769 C BE TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 40 4.5 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.

Published: Mar 22, 2005 |