Fairchild Semiconductor 2N5953
N-Channel RF Amplifier
| Part No. | 2N5953 |
|---|---|
| Datasheet | 2N5953 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel RF Amplifier |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 30 -30 10 -55 ~ 150 Max. 350 2.8 125 357 Units V V mA °C Units mW mW/°C °C/W °C/W © 2007 Fairchild Semiconductor Corporation 2N5953 Rev. 1.0.0 1 2N5953 — N-Channel RF AmplifierELECTRICAL CHARACTERISTICS
* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min.
