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2N6076 Datasheet PDF

Fairchild Semiconductor 2N6076

PNP Small Signal Transistor

Part No. 2N6076
Datasheet 2N6076 Download
Manufacturer
Fairchild Semiconductor
Description PNP Small Signal Transistor
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2N6076 datasheet page 1 preview

FEATURES

● BVceo .....25V(Min)
● hFE ...... 100(Min) @ Vce=10V, Ic=10mA
● Pb free July 2008

ABSOLUTE MAXIMUM RATINGS

Ta = 25°C unless otherwise noted Symbol Parameter Value VCBO Collector-Base Voltage -25 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current 500 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 ~ 150 * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25qC unless otherwise noted Symbol Parameter Max PC Collector Power Dissipation, by RTJA 625 RTJA Thermal Resistance, Junction to Ambient 200 * 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150 degrees C. 4. Minimum land pad. Unit V
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