Fairchild Semiconductor 2N6428
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Dissipation TJ Junction Temperature TSTG Storage Temperature● Refer to 2N5088 for graphs 1 TO-92 1. Emitter 2. Base 3. Collector Value 60 50 6 200 625 150 -55 ~ 150 Units V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO ICEO IEBO hFE VCE (sat) VBE (on) Cob fT NF/NV Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure/Noise Voltage Level : 2N6428 : 2N6428A Test Condition IC=100µA, IE=0 IC=1mA, IB=0 VCB=30V, IE=0 VCE=30V, IB=0 VBE=5V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=100µA VCE=5V, IC=1mA VCE=5V, IB=10mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=1mA, VCE=5V VCB=10V, IE=0, f=1MHz VCE=5V, IC=1mA, f=100MHz VCE=5V, IC=100µA (1) RS=10KΩ, BW=1Hz f=100Hz Min.