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2N6518
2N6518
High Voltage Transistor
• Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=625mW • Complement to 2N6515
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperature
1. Emitter 2. Base 3.