30N60B3D Datasheet Hgtg30n60b3d

Manufacturer: Fairchild (now onsemi)

Overview: Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device bining the.

Datasheet Details

Part number	30N60B3D
Manufacturer	Fairchild (now onsemi)
File Size	192.78 KB
Description	HGTG30N60B3D
Datasheet	30N60B3D-FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

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Datasheet Details

Key Features

More Datasheets from Fairchild (now onsemi)

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