33N25
Features
- 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
- Low gate charge ( typical 36.8 n C)
- Low Crss ( typical 39 p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 2)...
