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33N25 Datasheet Fdb33n25

Manufacturer: Fairchild (now onsemi)

Overview: FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Key Features

  • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V.
  • Low gate charge ( typical 36.8 nC).
  • Low Crss ( typical 39 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM.

33N25 Distributor