4435BZ
Features
- Max r DS(on) = 20mΩ at VGS = -10V, ID = -8.8A
- Max r DS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of ±3.8KV typical (note 3)
- High performance trench technology for extremely low r DS(on)
- High power and current handling capability
- Termination is Lead-free and Ro HS pliant
General Description
This P-Channel MOSFET is produced
® using
Fairchild
Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Single Pulse Avalanche Energy...
