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4435BZ - FDS4435BZ

Description

been especially tailored to minimize the on-state resistance.

Features

  • Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A.
  • Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A.
  • Extended VGSS range (-25V) for battery.

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Datasheet preview – 4435BZ

Datasheet Details

Part number 4435BZ
Manufacturer Fairchild Semiconductor
File Size 372.15 KB
Description FDS4435BZ
Datasheet download datasheet 4435BZ Datasheet
Additional preview pages of the 4435BZ datasheet.

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Full PDF Text Transcription

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FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features „ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant General Description This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
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