4435BZ Overview
This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. FDS4435BZ P-Channel PowerTrench® MOSFET.
4435BZ Key Features
- Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
- Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery
