4N30M
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Key Features
- High Sensitivity to Low Input Drive Current
- Meets or Exceeds All JEDEC Registered Specifications
- Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage