4N30M Datasheet (PDF) Download
Fairchild Semiconductor
4N30M

Description

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Key Features

  • High Sensitivity to Low Input Drive Current
  • Meets or Exceeds All JEDEC Registered Specifications
  • Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute
  • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage