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59N25 - FDA59N25

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V.
  • Low gate charge (typical 63 nC).
  • Low Crss (typical 70 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM VDS = 250V VDS(Avalanche) = 300V RDS(on) Typ. @10V = 41mΩ.

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    FDA59N25 250V N-Channel MOSFET September 2005 UniFET FDA59N25 250V N-Channel MOSFET Features • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V • Low gate charge (typical 63 nC) • Low Crss (typical 70 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM VDS = 250V VDS(Avalanche) = 300V RDS(on) Typ. @10V = 41mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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