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59N25 Datasheet Fda59n25

Manufacturer: Fairchild (now onsemi)

Overview: FDA59N25 250V N-Channel MOSFET September 2005 UniFET FDA59N25 250V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Key Features

  • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V.
  • Low gate charge (typical 63 nC).
  • Low Crss (typical 70 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM VDS = 250V VDS(Avalanche) = 300V RDS(on) Typ. @10V = 41mΩ.

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