59N25
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V
- Low gate charge (typical 63 nC)
- Low Crss (typical 70 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
