5N150UF
Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.
Key Features
- High Speed Switching
- Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
- High Input Impedance
- Part: 5N150UF
- Description: SGF5N150UF
- Manufacturer: Fairchild Semiconductor
- Size: 327.26 KB