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5N150UF - SGF5N150UF

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.

www.DataSheet4U.com SGF5N150UF is designed for the Switching Power Supply applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A.
  • High Input Impedance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGF5N150UF IGBT SGF5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. www.DataSheet4U.com SGF5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter C G TO-3PF G C E E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.