5N90 Key Features
- 5.8A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 13 pF) Fast switching 100%
- Part: 5N90
- Manufacturer: Fairchild (official site)
- Size: 644.32 KB
Other 5N90 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
5N90 | N-Channel MOSFET Transistor |
Nell Power Semiconductor |
5N90 | N-Channel Power MOSFET |
Unisonic Technologies |
5N90 | N-CHANNEL POWER MOSFET |
5N90 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply.