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5N90 - FQA5N90

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 5.8A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

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Datasheet Details

Part number 5N90
Manufacturer Fairchild Semiconductor
File Size 644.32 KB
Description FQA5N90
Datasheet download datasheet 5N90 Datasheet
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    www.DataSheet4U.com FQA5N90 September 2000 QFET FQA5N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 5.8A, 900V, RDS(on) = 2.
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