Fairchild Semiconductor 6N40C
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | 6N40C |
|---|---|
| Datasheet | 6N40C Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | FQP6N40C |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A● Low Gate Charge (Typ. 16 nC)
● Low Crss (Typ. 15 pF)
● 100% Avalanche Tested These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GD S G TO-220 S
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP6N40C 400 6 3.6 24 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. 270 6 7.3 4.5 73 0.58 -55 to +150 300 Thermal Characteristics +θ +θ FQP6N40C 1.71 62.5 Thermal Resistance, Junction-to-Case, Max.
