70N08 Description
Features 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. planar stripe, DMOS technology. This advanced technology has been especially tailored to...
70N08 Key Features
- 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100%