70N08 - N-Channel MOSFET

Features

77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www. DataSheet4U. com planar stripe, DMOS technology. This advanced technology has been especially tailored to mi.

Fairchild Semiconductor

Datasheet Details

Part number	70N08
Manufacturer	Fairchild Semiconductor
File Size	698.43 KB
Description	N-Channel MOSFET
Datasheet	70N08 Datasheet
Additional preview pages of the 70N08 datasheet.

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Full PDF Text Transcription

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FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description Features • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Published: Jul 2, 2008 |