Overview: Data Sheet HUF75329D3, HUF75329D3S
December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75329. Ordering Information PART NUMBER PACKAGE BRAND HUF75329D3 TO-251AA 75329D HUF75329D3S TO-252AA 75329D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.
