75343S Datasheet | Fairchild Semiconductor

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel Ultra FET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative Ultra FET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery operated products. Formerly developmental type TA75343. Ordering Information PART NUMBER PACKAGE BRAND HUF75343G3 TO-247 75343G HUF75343P3 TO-220AB 75343P HUF75343S3 TO-262AA HUF75343S3S TO-263AB NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE Features - 75A, 55V - Simulation Models - Temperature pensating PSPICE® and SABER™ Models - Thermal Impedance PSPICE™ and SABER Models Available on the WEB at: .fairchildsemi. - Peak Current vs Pulse Width...