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7N60B - 600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Key Features

  • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
  • Low gate charge ( typical 38 nC).
  • Low Crss ( typical 23 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • TO-220F package isolation = 4.0kV (Note 6) D G DS TO-220 SSP Series GD S TO-220F SSS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
7N65C FQP7N65C

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 23 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.