7N60B Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies. Features - 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V - Low gate charge ( typical 38 n C) - Low Crss ( typical 23 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - TO-220F package isolation = 4.0k V (Note 6) G DS TO-220 SSP Series GD S TO-220F SSS Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage Single Pulsed Avalanche Energy (Note...