7N60B Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.
7N60B Key Features
- 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
- Low gate charge ( typical 38 nC)
- Low Crss ( typical 23 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- TO-220F package isolation = 4.0kV (Note 6)
