Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Features
- 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
- Low gate charge ( typical 38 nC).
- Low Crss ( typical 23 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- TO-220F package isolation = 4.0kV (Note 6)
D
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC.
7N60B Datasheet
