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86246L Datasheet N-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

„ Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

Applications „ Load Switch „ Primary Switch „ Buck/Boost Switch D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power

Overview

FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228.

Key Features

  • General.