Datasheet Summary
FDT86246L N-Channel PowerTrench® MOSFET
February 2016
FDT86246L
N-Channel PowerTrench® MOSFET
150 V, 2 A, 228 mΩ
Features
General Description
- Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A
- Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- Load Switch
- Primary Switch
- Buck/Boost...