FEATURES
GENERAL DESCRIPTION
Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant APPLICATIONS
Load Switch Primary Switch Buck/Boost Switch D D SOT-223 S D G GDS MOSFET MAXIMUM RATINGS
TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power
Fairchild Semiconductor
