Fairchild Semiconductor 8N50NZ
This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.| Part No. | 8N50NZ |
|---|---|
| Datasheet | 8N50NZ Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A● Low Gate Charge (Typ. 14 nC)
● Low Crss (Typ. 5 pF)
● 100% Avalanche Tested
● Improve dv/dt Capability
● ESD Improved Capability
● RoHS Compliant
APPLICATIONS
● LCD/LED TV● Lighting
● Uninterruptible Power Supply
● AC-DC Power Supply
DESCRIPTION
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. D G GDS TO-220 GDS TO-220F S MOSFETMAXIMUM RATINGS
TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Stora...
