9N50C - FQI9N50C

Fairchild (now onsemi)

Datasheet Details

Part number	9N50C
Manufacturer	Fairchild (now onsemi)
File Size	643.37 KB
Description	FQI9N50C
Datasheet	9N50C Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

FQB9N50C/FQI9N50C QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General.

Key Features

9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID www. DataSheet4U. com IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain C.

📁 Similar Datasheet

Part Number	Description	Manufacturer
9N50	N-CHANNEL POWER MOSFET	UTC
9N50	N-Channel MOSFET Transistor	Inchange Semiconductor
9N50K-MT	N-CHANNEL POWER MOSFET	Unisonic Technologies

More Datasheets from Fairchild (now onsemi)

Part Number	Description