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BAT54HT1G Datasheet PDF

Fairchild Semiconductor BAT54HT1G

Schottky Barrier Diodes

Part No. BAT54HT1G
Datasheet BAT54HT1G Download
Manufacturer
Fairchild Semiconductor
Description Schottky Barrier Diodes
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BAT54HT1G datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VRRM IF(AV) IFSM TSTG TJ Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Storage Temperature Range Operating Junction Temperature 30 200 600 -65 to +150 -55 to +150 V mA mA °C °C * These ratings are limiting values above which the serviceability of the diode may be impaired. Note: 1)These ratings are based on a maximum junction temperature of 150 °C. These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. © 2004 Fairchild Semiconductor Corporation BAT54HT1G Rev.
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