BAV99WT1G Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

* Symbol VRRM IF(AV) IFSM Ta = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature Value 70 200 1.0 2.0 -65 to +150 150 Unit V mA A A °C °C TSTG TJ Thermal Characteristics Symbol PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient Parameter Value 270 460 Unit mW °C/W FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)

ELECTRICAL CHARACTERISTICS

Symbol VR VF TC = 25°C unless otherwise noted Parameter Breakdown Voltage Forward Voltage IR = 100µA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Conditions Min. 70 Max 715 855 1.0 1.25 2.5 50 70 2.0 6.0 Units V mV mV V V µA µA µA pF ns IR Reverse Leakage VR = 70V VR = 25V, TA = 150°C VR = 70V, TA = 150°C VR = 0V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω CT trr Total Capacitance Reverse Recovery Time ©2005 Fairchild Semiconductor Corporation 1 BAV99WT1G Rev.