Fairchild Semiconductor BC239
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | BC239 |
|---|---|
| Datasheet | BC239 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● LOW NOISE: BC239 TO-92ABSOLUTE MAXIMUM RATINGS
(TA=25° C) Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 VEBO 6 5 100 500 150 -55 ~ 150 V V mA mW °C °C 1. Collector 2. Base 3. Emitter V V Rating Unit V V IC PC TJ T STGELECTRICAL CHARACTERISTICS
(TA=25° C) Characteristic Collector-Emitter Breakdown Voltage :BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Symbol BVCEO Test Conditions IC=2mA, IB=0 IE=1µA, IC=0 45 25 6 5 ICES VCE=50V, IB=0 VCE=30V, IB=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=...
