BC307 Datasheet PDF

APPLICATIONS

● Low Noise: BC309 PNP Epitaxial Silicon Transistor

ABSOLUTE MAXIMUM RATINGS

Ta=25°C unless otherwise noted Symbol Parameter VCES Collector-Emitter Voltage : BC307 : BC308/309 VCEO Collector-Emitter Voltage : BC307 : BC308/309 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature 1 TO-92 1. Collector 2. Base 3. Emitter Value -50 -30 -45 -25 -5 -100 500 150 -55 ~ 150 Units V V V V V mA mW °C °C ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC307/308/309

ELECTRICAL CHARACTERISTICS

Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : BC307 : BC308/309 IC= -2mA, IB=0 BVCES Collector-Emitter Breakdown Voltage : BC307 : BC308/309 IC= -10µA, VBE=0 BVEBO ICES hFE VCE (sat) Emitter-Base Breakdown Voltage Collector Cut-off Current : BC307 : BC308/30