Fairchild Semiconductor BC32725
PNP EPITAXIAL SILICON TRANSISTOR
| Part No. | BC32725 |
|---|---|
| Datasheet | BC32725 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Suitable for AF-Driver stages and low power output stages● Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C VCEO VEBO IC PC TJ TSTGELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Collector-Emitter Breakdown Voltage : BC327 : BC328 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC327 : BC328 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50...
