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BC318C — PNP Epitaxial Silicon Transistor
September 2007
BC318C PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Operating and Storage Junction Temperature Range
Parameter
Value
30 20 5 100 -55 ~ 150
Units
V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.
BC813C Datasheet
